Generalized scaling of spin qubit coherence in over 12,000 host materials
S. Kanai, F. J.Heremans, H. Seo, G. Wolfowicz, C. P. Anderson, S. E. Sullivan, M. Onizhuk, G. Galli, D. D. Awschalom, H. Ohno. Generalized scaling of spin qubit coherence in over 12,000 host materials. Proc. Natl. Acad. Sci. U.S.A. 2022. Vol. 119. 10.1073/pnas.2121808119.
Development of a Scalable Quantum Memory Platform -- Materials Science of Erbium-Doped TiO2 Thin Films on Silicon
M. K. Singh, G. Wolfowicz, J. Wen, S. E. Sullivan, A. Prakash, A. M. Dibos, D. D. Awschalom, F. J. Heremans, S. Guha. Development of a scalable quantum memory platform -- materials science of erbium-doped TiO2 thin films on silicon. arXiv. 2022. 2202.05376.
Parasitic erbium photoluminescence in commercial telecom fiber optical components
G. Wolfowicz, F. J. Heremans, D. D. Awschalom. Parasitic erbium photoluminescence in commercial telecom fiber optical components. Opt. Lett. 2021. Vol. 46. 10.1364/OL.437417.
Photoluminescence spectra of point defects in semiconductors: Validation of first-principles calculations
Y. Jin, M. Govoni, G. Wolfowicz, S. E. Sullivan, F. J. Heremans, D. D. Awschalom, G. Galli. Photoluminescence spectra of point defects in semiconductors: Validation of first-principles calculations. Phys. Rev. Materials. 2021. Vol. 5. 10.1103/PhysRevMaterials.5.084603.
Quantum guidelines for solid-state spin defects
G. Wolfowicz, F. J. Heremans, C. P. Anderson, S. Kanai, H. Seo, A. Gali, G. Galli, D. D. Awschalom. Quantum guidelines for solid-state spin defects. Nat Rev Mater. 2021. Vol. 6. 10.1038/s41578-021-00306-y.
Universal coherence protection in a solid-state spin qubit
K. C. Miao, J. P. Blanton, C. P. Anderson, A. Bourassa, A. L. Crook, G. Wolfowicz, H. Abe, T. Ohshima, D. D. Awschalom. Universal coherence protection in a solid-state spin qubit. Science. 2020. 10.1126/science.abc5186.
Vanadium spin qubits as telecom quantum emitters in silicon carbide
G. Wolfowicz, C. P. Anderson, B. Diler, O. G. Poluektov, F. J. Heremans, D. D. Awschalom. Vanadium spin qubits as telecom quantum emitters in silicon carbide. Science Advances. 2020. eaaz1192.
Epitaxial Er-doped Y2O3 on silicon for quantum coherent devices
M. K. Singh, A. Prakash, G. Wolfowicz, J. Wen, Y. Huang, T. Rajh, D. D. Awschalom, T. Zhong, S. Guha. Epitaxial Er-doped Y2O3 on silicon for quantum coherent devices. APL Materials. 2020. Vol. 8, Pg. 031111. 10.1063/1.5142611.
Coherent control and high-fidelity readout of chromium ions in commercial silicon carbide
B. Diler, S. J. Whiteley, C. P. Anderson, G. Wolfowicz, M. E. Wesson, E. S. Bielejec, F. J. Heremans, D. D. Awschalom. Coherent control and high-fidelity readout of chromium ions in commercial silicon carbide. npj Quantum Inf 6, 11 (2020).
Electrical and optical control of single spins integrated in scalable semiconductor devices
C. P. Anderson, A. Bourassa, K. C. Miao, G. Wolfowicz, P. J. Mintun, A. L. Crook, H. Abe, J. U. Hassan, N. T. Son, T. Ohshima, D. D. Awschalom. Electrical and optical control of single spins integrated in scalable semiconductor devices. Science. 2019. Vol. 366, Pg. 1225.