Pronouns: she/her
Jiefei is an assistant staff scientist at ANL. Her current research focuses on exploration of application driven designer qubits including erbium in various oxides and hybrid quantum photonic structure and device.
Extended spin relaxation times of optically addressed vanadium defects in silicon carbide at telecommunication frequencies (Phys. Rev. Applied Editors' Suggestion)
J. Ahn, C. Wicker, N. Bitner, M. T. Solomon, B. Tissot, G. Burkard, A. M. Dibos, J. Zhang, F. J. Heremans, D. D. Awschalom. Extended spin relaxation times of optically addressed vanadium defects in silicon carbide at telecommunication frequencies. 2024. Phys. Rev. Applied 10.1103/PhysRevApplied.22.044078
Coherent Erbium Spin Defects in Colloidal Nanocrystal Hosts
J. Wong, M. Onizhuk, J. Nagura, A. S. Thind, J. K. Bindra, C. Wicker, G. D. Grant, Y. Zhang, J. Niklas, O. G. Poluektov, R. F. Klie, J. Zhang, G. Galli, F. J. Heremans, D. D. Awschalom, A. P. Alivisatos. Coherent Erbium Spin Defects in Colloidal Nanocrystal Hosts. 2024. Nano. Lett. 10.1021/acsnano.4c04083
Optical and microstructural characterization of Er3+ doped epitaxial cerium oxide on silicon
G. D. Grant, J. Zhang, I. Masiulionis, S. Chattaraj, K. E. Sautter, S. E. Sullivan, R. Chebrolu, Y. Liu, J. B. Martins, J. Niklas, A. M. Dibos, S. Kewalramani, J. W. Freeland, J. Wen, O. G. Poluektov, F. J. Heremans, D. D. Awschalom, S. Guha. Optical and microstructural characterization of Er3+ doped epitaxial cerium oxide on silicon. 2023. arXiv:2309.16644
Optical and spin coherence of Er3+ in epitaxial CeO2 on silicon
J. Zhang, G. D. Grant, I. Masiulionis, M. T. Solomon, J. K. Bindra, J. Niklas, A. M. Dibos, O. G. Poluektov, F. J. Heremans, S. Guha, D. D. Awschalom. Optical and spin coherence of Er3+ in epitaxial CeO2 on silicon. 2023. arXiv:2309.16785
Quantifying the limits of controllability for the nitrogen-vacancy electron spin defect
P. Kairys, J. C. Marcks, N. Delegan, J. Zhang, D. D. Awschalom, F. J. Heremans. Quantifying the limits of controllability for the nitrogen-vacancy electron spin defect. 2023. arXiv:2309.03120.