Pronouns: he/him
Extended spin relaxation times of optically addressed vanadium defects in silicon carbide at telecommunication frequencies (Phys. Rev. Applied Editors' Suggestion)
J. Ahn, C. Wicker, N. Bitner, M. T. Solomon, B. Tissot, G. Burkard, A. M. Dibos, J. Zhang, F. J. Heremans, D. D. Awschalom. Extended spin relaxation times of optically addressed vanadium defects in silicon carbide at telecommunication frequencies. 2024. Phys. Rev. Applied 10.1103/PhysRevApplied.22.044078