We are exploring defects in a variety of wide-bandgap materials, such as the divacancy in silicon carbide (SiC). We investigate these defects for both fundamental and applied studies of quantum information processing as well as for developing hybrid quantum systems and nanoscale sensing.
Divacancy Defects in Silicon Carbide
- Room Temperature Coherent Control of Defect Spin Qubits in Silicon Carbide
- Engineering SiC Defects Spins through Crystal Polymorphism
- Electrical Control of SiC Defect Spins
- Isolation of Single Spins in Silicon Carbide
- Entanglement of Macroscopic SiC Defect Spin Ensembles
- Spin Coherence in Silicon Carbide Defects
- High Fidelity Spin-to-Photon Conversion in SiC Defects
- Charge Dynamics of Point Defects in SiC
- Electrically Driven Optical Interferometry and Universal Coherence Protection
- Entanglement and Control of Single Nuclear Spins
- Five-Second Coherence with Single-Shot Readout
Silicon Carbide Devices and Fabrication
- Photonic Cavities for Silicon Carbide Defect Spins
- Electrometry in SiC
- Spin-Photon Interactions Addressed by Gaussian Acoustics
- Purcell Enhancement with Coherent Spin Control
- Integration with Scalable Semiconductor Diodes
Defect Qubit Search in SiC
- Spectroscopy and Control of Cr4+ in SiC and GaN
- Cr4+ in Commercial SiC
- Nitrogen-Vacancy Center in SiC
- Vanadium in SiC