The following figure shows Time Resolved Faraday Rotation singal obtained in GaAs bulk samples with different doping concentrations:

Resonant spin amplification spectra in GaAs displaying periodic Faraday rotation peaks under varying magnetic fields. The figure compares experimental measurements with theoretical fits, illustrating coherent electron spin dynamics and extended spin lifetimes in low-doped gallium arsenide.

Typically, spin lifetimes are obtained from pump-probe Faraday rotation measurements by varying the pump-probe temporal delay. However, when the observed Faraday rotation experiences little decay over the accessible range of the delay line spin lifetimes are difficult to obtain. This is the case for n-GaAs with n = 1e16 cm-3.

To address this problem, we utilize a technique called Resonant Spin Amplification which drives the spin precession into resonance with the exciting laser cavity. By scanning the magnetic field at a fixed pump-probe delay, we obtain a periodic series of resonances which are shown below:

Magnetic-field-dependent Faraday rotation measurements demonstrating long spin lifetimes in GaAs. Oscillatory resonance peaks arise from coherent electron spin precession, while fitted curves reproduce the experimental data, highlighting slow spin relaxation and strong spin coherence in gallium arsenide semiconductors.

By analyzing the width of the resonant peaks at different fields, a measure of the spin lifetime is obtained. For the case of bulk GaAs the extracted lifetimes are shown below:

Resonant spin amplification measurements showing long electron spin lifetimes in GaAs. Faraday rotation signals are plotted versus magnetic field for pump-probe delays of 10 ps and 1 ns. Experimental data and fitted curves demonstrate coherent spin precession and long-lived spin coherence in gallium arsenide.

To learn more about these measurements, go to the Resonant Spin Amplification page or look in:

"Resonant spin amplification in n-type GaAs", J.M. Kikkawa, D.D. Awschalom, Phys. Rev. Lett., vol. 80, p. 4313 (1998).