Defects in solid state materials have different charge states. These charge states often have different emission characteristics - they may have different emission spectra or no photoluminescence (PL) at all, as opposed to the charge states more commonly studied. We can efficiently move between charge states of different defects using optical pumping. The rate of this charge state conversion using optical pumping in both the silicon vacancy and the divacancy (VV) in SiC depends on the presence of electric fields. Therefore, we can detect applied RF fields using changes in the PL of the defects, which is electrometry by optical conversion (EOCC). We observe change in the PL of VV over time depending on the magnitude of the applied electric field by measuring R, the characteristic decay time.

Log-scale graph of relative resonance shift versus applied electric field in silicon carbide electrometry at 10 MHz modulation frequency. Experimental data closely matches a theoretical model, demonstrating increasing optical resonance shifts with stronger electric fields.

For an electric field frequency of 10 MHz, we can obtain sensitivity of down to 41 (V/cm)^2/sqrt(Hz) with an ensemble of approximately 10^4 VVs.

Plot of continuous-wave electric field sensitivity as a function of 976 nm laser power for silicon carbide electrometry. Sensitivity improves with increasing optical power before leveling off, with colored bars indicating optical excitation wavelengths and electric field modulation conditions.

We also observe shifts in R depending on the frequency of the applied electric field. This shows that EOCC can work for frequencies up to a few GHz.

Frequency response of normalized resonance shift in silicon carbide electrometry for different laser spot sizes. Experimental data and model fits show modulation response across electric field frequencies from 100 Hz to 10 GHz, highlighting modulation and RC cutoff frequencies.

We can also measure the phase of the electric field using the change in PL.

Phase-sensitive electrometry measurement in silicon carbide. The top schematic shows synchronized laser pulses and oscillating electric fields, while the lower graph plots photoluminescence contrast versus phase offset for several duty cycles, compared with theoretical model fits.

By using the same general technique, we can see how changing the magnitude of the electric field changes the PL response of the silicon vacancy defect as well.

Continuous-wave electrometry sensitivity measurements of silicon vacancy defects in silicon carbide across temperatures from 5 K to 350 K. The graph shows normalized contrast scaling with electric field strength under 12 MHz modulation, alongside charge-state transition arrows between bright and dark defect states.

Since SiC is piezoelectric, this electrometry technique can also be used to map mechanical strain in the material. We can fabricate a surface acoustic wave (SAW) resonator, which will have particular transverse wave modes. Using EOCC, we can directly observe these transverse modes and are able to fully separate each mode in both the spatial and frequency domains.

We build off our previous work by using heterodyne electrometry measurements. We design a system with two sets of electrodes, one for a pump electric field and one for the sensed electric field. When the lock-in detection frequency matches the frequency difference between the pump and sensed electric fields, we obtain a signal that is proportional to the product of the magnitudes of the two electric fields. Using this, we can observe how the EOCC contrast changes as a function of the sensed electric field magnitude, for both coherent and incoherent heterodyne measurements.

Comparison of electric-field sensing methods in silicon carbide electrometry. Log-scale plot shows electrically optically coupled contrast versus sensed electric field for standard EOCC, incoherent heterodyne, and coherent heterodyne techniques, with fitted curves demonstrating improved sensitivity scaling.

The best sensitivity reached is 1.1 (V/cm)/sqrt(Hz), which is slightly better per defect than sensitivity achieved for a single spin and two orders of magnitude better per defect for a large ensemble. Furthermore, we can apply the pump electric field both parallel and orthogonal to the sensed field. Since the signal is also proportional to their dot product, we can map out the vector components of the electric field in a 2D map.

Spatial maps of electrometry contrast and phase in silicon carbide for parallel and orthogonal electric field configurations. Heatmaps show measured EOCC contrast and phase across X-Y device coordinates, illustrating directional electric field sensing and spatially resolved electric field distributions.

Details can be found in our manuscripts:

G. Wolfowicz, et. al., PNAS (2018)

G. Wolfowicz, et. al., APL (2019)